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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTORPNP (c) TO 126 FEATURES Power dissipation PCM : 1.25 W Tamb=25ae(c) Collector current ICM : -3 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) 1. EMITTER 2.COLLECTOR 3.BASE 123 unless Test otherwise MIN specified(c) TYP MAX UNIT V V V -10 -10 -10 |I A |I A |I A conditions Ic=-100|I =0 A IE IC= -10 mA , IB=0 IE= -100 |I IC=0 A VCB= -40 V , IE=0 VCE=-30 V , IB=0 VEB=-6V , IC=0 -40 -30 -6 VCE= -2V, IC= -1A IC=-2A, IB= -0.2A VCE= -5V, I =-0.1A C 60 400 -0.5 V Transition frequency f T f = 10MHz 50 MHz CLASSIFICATION OF hFE(1) Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400 TO-126 PACKAGE OUTLINE DIMENSIONS D A1 A E b1 L e e1 L1 b C Dimensions In Millimeters Min 2.500 1.100 0.660 1.170 0.450 7.400 10.600 2.290TYP 4.480 15.300 2.100 3.900 3.000 4.680 15.700 2.300 4.100 3.200 0.176 0.602 0.083 0.154 0.118 Max 2.900 1.500 0.860 1.370 0.600 7.800 11.000 Min 0.098 0.043 0.026 0.046 0.018 0.291 0.417 0.090TYP 0.184 0.618 0.091 0.161 0.126 P |O Symbol A A1 b b1 c D E e e1 L L1 P |O Dimensions In Inches Max 0.114 0.059 0.034 0.054 0.024 0.307 0.433 |
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